SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, the contact electrode extends in the inter-layer insulating layer toward the second semiconductor region. The metal silicide film is in contact with the second semiconductor region and the contact electrode. The metal silicide film includes a first part and a second part. The first part is provided between a bottom of the contact electrode and the second semiconductor region. The second part is provided on a surface of the second semiconductor region between the first part and the gate electrode. A bottom of the second part is located at a position shallower than a bottom the first part.

主权项

1. A semiconductor device comprising:
a semiconductor layer containing silicon, the semiconductor layer including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type; a gate insulating film provided on the first semiconductor region; a gate electrode provided on the gate insulating film; an inter-layer insulating layer provided on the semiconductor layer and covering the gate electrode; a contact electrode extending in the inter-layer insulating layer toward the second semiconductor region; and a metal silicide film being in contact with the second semiconductor region and the contact electrode, the metal silicide film including a first part and a second part, the first part provided between a bottom of the contact electrode and the second semiconductor region, the second part provided on a surface of the second semiconductor region between the first part and the gate electrode, a bottom of the second part being located at a position shallower than a bottom the first part.