SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a stacked body and a column. The stacked body includes a plurality of electrode layers. The column includes a semiconductor channel, a charge storage film, and a doped silicon layer. The semiconductor channel extends in the stacking direction. The semiconductor channel is a polycrystalline. An average grain size of crystals in a polycrystalline is not less than a film thickness of the semiconductor channel. The charge storage film is provided between the semiconductor channel and the electrode layers. The doped silicon layer contains a metal element and an impurity other than a metal element. The doped silicon layer is in contact with a top end of the semiconductor channel.

主权项

1. A semiconductor memory device comprising:
a stacked body including a plurality of electrode layers, an insulator being interposed between the electrode layers; and a column extending in a stacking direction in the stacked body; the column including a semiconductor channel extending in the stacking direction, the semiconductor channel being a polycrystalline, an average grain size of crystals in the polycrystalline being not less than a film thickness of the semiconductor channel, a charge storage film provided between the semiconductor channel and the electrode layers, and a doped silicon layer containing a metal element and an impurity other than a metal element, the doped silicon layer being in contact with a top end of the semiconductor channel.