NON-POLAR BLUE LED EPITAXIAL WAFER BASED ON LAO SUBSTRATE AND PREPARATION METHOD THEREFOR

摘要

The present invention discloses a non-polar blue LED epitaxial wafer based on an LAO substrate (10) and a preparation method thereof. The preparation method includes the following steps: a) adopting the LAO substrate (10), selecting the crystal orientation, and cleaning the surface of the LAO substrate (S1); b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate (S2); and c) sequentially forming a non-polar m face GaN buffer layer (11), a non-polar non-doped u-GaN layer (12), a non-polar n-type doped GaN film (13), a non-polar InGaN/GaN quantum well (14), a non-polar m face AlGaN electron barrier layer (15) and a non-polar p-type doped GaN film (16) on the LAO substrate by adopting metal organic chemical vapor deposition (S3). According to the non-polar blue LED epitaxial wafer based on the LAO substrate (10) and the preparation method thereof provided by the present invention, the non-polar blue LED epitaxial wafer has the advantages of low defect density, good crystalline quality and good luminous performance, and the preparation cost is low.