| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for manufacturing a GaN-based semiconductor light emitting element having a luminous layer of a multiquantum well structure.SOLUTION: In a method for manufacturing a semiconductor light emitting element, a process of growing a barrier layer including an InGaN sub barrier layer and a GaN sub barrier layer stacked therein from an n-type layer side and an InGaN well layer uses Nand Has carrier gas, and includes the steps of: supplying an organic gallium source material and an organic indium source material using Nas carrier gas to grow the InGaN sub barrier layer; growing the GaN sub barrier layer by switching carrier gas from Nto gas containing 85% or more of Hsimultaneously with the stop of the supply of the organic indium source material; and restarting the supply of the organic indium source material while keeping carrier gas as the gas containing 85% or more of Hand switching carrier gas from the gas containing 85% or more of Hto Nat a timing later than the restart timing of the supply of the organic indium source material to grow the InGaN well layer. |
