| 摘要 |
There is provided a developer not causing pattern collapse during the formation of a fine pattern and a pattern formation method using the developer. A developer used in a lithography process, comprising a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. A method for producing a semiconductor device comprising: (A) applying a resist to a semiconductor substrate to form a resist film and exposing the resist film; (B) bringing a surface of the resist film into contact with the above-mentioned developer to form a layer of the polymer between patterns; and (C) removing the resist film by dry etching to form a reverse pattern using the polymer. |
