发明名称 THERMAL METAL GROUND FOR INTEGRATED CIRCUIT RESISTORS
摘要 Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is located over the resistors to form a heat sink. An area of thermal posts connected to the metal region is also located over the resistor. The metal region can be connected to the substrate of the integrated circuit to provide a low impedance thermal path out of the integrated circuit.
申请公布号 EP3105785(A1) 申请公布日期 2016.12.21
申请号 EP20150706331 申请日期 2015.02.09
申请人 Qualcomm Incorporated 发明人 MITTAL, Arpit;LOKE, Alvin Leng Sun;SAEIDI, Mehdi;DRENNAN, Patrick
分类号 H01L23/367;H01L23/522;H01L49/02 主分类号 H01L23/367
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