High aspect ratio etching method

摘要

A plurality of semiconductor layers is etched to define a first plurality of stacks of active strips between a first plurality of trenches. A first memory layer is formed on side surfaces of active strips in the first plurality of trenches, and a first layer of conductive material is formed over the first memory layer. The first plurality of stacks is etched to define a second plurality of stacks of active strips between a second plurality of trenches of the plurality of semiconductor layers. A second memory layer is formed on side surfaces of active strips in the second plurality of trenches, and a second layer of conductive material is formed over the second memory layer. Channel regions of memory cells in the memory device are formed in active strips of the plurality of semiconductor layers in the second plurality of stacks.

主权项

1. A method for manufacturing a memory device, comprising:
forming a plurality of semiconductor layers alternating with insulating layers on an integrated circuit substrate; etching the plurality of semiconductor layers to define a first plurality of stacks of active strips between a first plurality of trenches; and etching the first plurality of stacks to divide each stack in the first plurality of stacks into two stacks in a second plurality of stacks of active strips of the plurality of semiconductor layers, wherein each stack in the second plurality of stacks is defined between a first trench in the first plurality of trenches and a second trench in a second plurality of trenches; wherein channel regions of memory cells in the memory device are formed in active strips of the plurality of semiconductor layers in the second plurality of stacks.