| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type and having an active cell area and a termination area; a semiconductor transistor, formed in the active cell area and having a drain region, a gate region, and a source region; a source metal, formed over the active cell area of the substrate and electrically coupled to the source region; a gate metal, formed over the termination area of the substrate and electrically coupled to the gate region, wherein the gate metal is formed around the source metal and is separated from the source metal with a gap; and an ESD protection structure, formed atop the termination area of the semiconductor substrate and disposed substantially between the source metal and the gate metal, wherein the ESD protection structure comprises a first isolation layer and an ESD protection layer, and wherein the first isolation layer is disposed between the ESD protection layer and the substrate to isolate the ESD protection layer from the substrate; and wherein the ESD protection structure has a first portion adjacent to the source metal, a second portion adjacent to the gate metal and a middle portion between and connecting the first portion and the second portion, wherein the middle portion has a greater thickness than a thickness at any point along the first portion and the second portion. |
