发明名称 SOI基板およびそれを用いた物理量センサ、SOI基板の製造方法および物理量センサの製造方法
摘要 PROBLEM TO BE SOLVED: To improve the bondability of a thermal oxide film and a second substrate.SOLUTION: After the step of forming a thermal oxide film 20 on a first substrate 10 with a dent 11 formed therein, a thermal oxide film adjustment step is carried out, in which, if the peripheral part of the opening of the dent part in a face 10a of the first substrate 10 is defined as a boundary area 12a, and an area larger than the boundary area 12a and surrounding the boundary area 12a is defined as a peripheral area 12b, the thickness of the portion formed in the boundary area 12a of the thermal oxide film 20 is made less than the thickness of a portion formed in the peripheral area 12b. Then, the portion formed in the peripheral area 12a of the thermal oxide film 20 is bonded to a second substrate 30.
申请公布号 JP6048435(B2) 申请公布日期 2016.12.21
申请号 JP20140065941 申请日期 2014.03.27
申请人 株式会社デンソー 发明人 西田 純也;吉岡 テツヲ;浅井 信哉
分类号 H01L21/02;B81B3/00;B81C1/00;G01P15/125;H01L27/12;H01L29/84 主分类号 H01L21/02
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