| 摘要 |
According to the invention, a Micromegas is used for measuring properties of a layer (L) arranged on a carrier substrate (S), such as the layer resistivity (p) when the layer thickness (D) is known or the layer thickness (D) when the layer resistivity (p) is known, or such as the layer resistivity (p) when the relative dielectric constant (k) of the layer is known or the relative dielectric constant (k) of the layer when the layer resistivity (p) is known. With the Micromegas, a current is generated that causes a change in the surface potential of the layer, which in turn causes a change in the amplification factor of the Micromegas. With the relationship between amplification and potential being known, the voltage drop over the layer and the current through the layer are known, and hence the resistivity can be calculated if the layer thickness is known, or vice versa. |
