| 摘要 |
PROBLEM TO BE SOLVED: To shorten gate length of an FET using a nanowire.SOLUTION: On an insulation layer 121a, a negative type resist layer 124 is formed in a state covering a lower gate electrode 122 and a coated nanowire 103. A positive type resist layer 125 is formed on the negative resist layer 124. Source and drain formation regions 201 at both ends of the coated nanowire 103 are irradiated with electron beams, so that the positive type resist layer 125 and the negative type resist layer 124 are simultaneously exposed. |
