发明名称 SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of inhibiting insulation breakdown of a gate insulation film while suppressing increase in on-resistance.SOLUTION: A silicon carbide substrate 10 includes a JFET region 2 which is sandwiched between a first body region 13c and a second body region 13b and includes one side M23a and has a second conductivity type; a gate insulation film 15 which includes a first portion 15a1 which contacts the first body region 13c and the JFET region 2, a second portion 15a2 which contacts the second body region 13b and the JFET region 2, and a third portion 15b which contacts the JFET region 2 and which is sandwiched between the first portion 15a1 and the second portion 15a2. A thickness tb of the third portion 15b is larger than a thickness of each of the first portion 15a1 and the second portion 15a2. The third portion 15b is provided on an end C0 of one side M12a.SELECTED DRAWING: Figure 1
申请公布号 JP2016154181(A) 申请公布日期 2016.08.25
申请号 JP20150031788 申请日期 2015.02.20
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UCHIDA MITSUAKI;HIYOSHI TORU;WADA KEIJI
分类号 H01L29/12;H01L21/28;H01L21/283;H01L29/41;H01L29/423;H01L29/49;H01L29/78 主分类号 H01L29/12
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