发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of inhibiting insulation breakdown of a gate insulation film while suppressing increase in on-resistance.SOLUTION: A silicon carbide substrate 10 includes a JFET region 2 which is sandwiched between a first body region 13c and a second body region 13b and includes one side M23a and has a second conductivity type; a gate insulation film 15 which includes a first portion 15a1 which contacts the first body region 13c and the JFET region 2, a second portion 15a2 which contacts the second body region 13b and the JFET region 2, and a third portion 15b which contacts the JFET region 2 and which is sandwiched between the first portion 15a1 and the second portion 15a2. A thickness tb of the third portion 15b is larger than a thickness of each of the first portion 15a1 and the second portion 15a2. The third portion 15b is provided on an end C0 of one side M12a.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016154181(A) |
申请公布日期 |
2016.08.25 |
申请号 |
JP20150031788 |
申请日期 |
2015.02.20 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
UCHIDA MITSUAKI;HIYOSHI TORU;WADA KEIJI |
分类号 |
H01L29/12;H01L21/28;H01L21/283;H01L29/41;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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