发明名称 |
INTEGRATED SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER MODULE |
摘要 |
An integrated semiconductor laser device with a semiconductor laser and a semiconductor optical amplifier for amplifying output laser light of the semiconductor laser integrated on a substrate, the integrated semiconductor laser device including: a first active layer included in the semiconductor laser; and a second active layer included in the semiconductor optical amplifier, wherein the first active layer and the second active layer have a multiple quantum well structure, and the second active layer has a larger number of quantum wells than the first active layer. This provides an integrated semiconductor laser device and a semiconductor laser module whose output laser light has a narrow spectral linewidth and high intensity. |
申请公布号 |
EP3107160(A1) |
申请公布日期 |
2016.12.21 |
申请号 |
EP20150749399 |
申请日期 |
2015.02.06 |
申请人 |
Furukawa Electric Co. Ltd. |
发明人 |
KIYOTA, Kazuaki;KOBAYASHI, Go |
分类号 |
H01S5/026;H01S5/12;H01S5/125;H01S5/343;H01S5/50 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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