发明名称 耐タンパメモリ方式
摘要 PROBLEM TO BE SOLVED: To obtain a tamper-resistant memory system capable of reducing address dependency of the side channel information of a memory itself during memory access.SOLUTION: Address dependency of side channel information is reduced by providing an address control unit (11) for generating an inverted address where all bits of a set address are inverted, when performing read access corresponding to the set address from one port, and then performing read access corresponding to the inverted address from the other port or a dummy port.
申请公布号 JP6048965(B2) 申请公布日期 2016.12.21
申请号 JP20130089516 申请日期 2013.04.22
申请人 三菱電機株式会社 发明人 佐伯 稔
分类号 H04L9/10;G06F12/14;G06F21/75 主分类号 H04L9/10
代理机构 代理人
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