半導体装置及び半導体装置の製造方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a simple structure and a high breakdown voltage.SOLUTION: The semiconductor device comprises: a drift region 2 of a first conductivity type which is formed on a semiconductor substrate 1; a diffusion region 3 of a second conductivity type which is formed in the drift region 2 so as to be in contact with the principal surface of the drift region 2; a diffusion region 4 of the first conductivity type which is formed in the diffusion region 3 of the second conductivity type so as to be in contact with the principal surface of the drift region 2; a first electrode 5 which is made of a different material from the semiconductor substrate 1 and bonded to the diffusion region 3 of the second conductivity type and the diffusion region 4 of the first conductivity type; a second electrode 6 which is ohmically connected to the diffusion region 3 of the second conductivity type and the diffusion region 4 of the first conductivity type; a protection diode connected between the first electrode 5 and the second electrode 6; and a temperature detection diode which is in antiparallel connection with the protection diode between the first electrode 5 and the second electrode 6.