MEMORY READ APPARATUS AND METHODS

摘要

Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.

主权项

1. An apparatus comprising:
a plurality of strings, each string comprising a plurality of charge storage devices associated with a respective pillar extending from a substrate, the pillars comprising semiconductor material; a plurality of access lines associated with the strings; a voltage regulator circuit is configured to raise an electrical potential of each of the pillars in a sub-block to a raised electrical potential, to keep the electrical potential of a selected one of the pillars at the raised electrical potential, and to lower the electrical potential of non-selected pillars other than the selected pillar; and a sense and latch circuit coupled to the selected pillar to sense a state of a selected one of the charge storage devices after the electrical potential of the non-selected pillars is lowered to read the state of the selected charge storage device.