| 发明名称 |
MEMORY SYSTEM |
| 摘要 |
A memory system includes a semiconductor memory device that includes a plurality of memory cells, and a controller that controls an operation of the semiconductor memory device to set the memory cells to have a threshold voltage distribution corresponding to data being written therein, when data is being written in the memory cells, and to set the memory cells to have a neutral threshold voltage distribution, the neutral threshold voltage distribution being different from any of a plurality of threshold voltage distributions corresponding to valid data, when data is not being written in the memory cells. |
| 申请公布号 |
US2016267996(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201614995045 |
申请日期 |
2016.01.13 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BUSHNAQ Sanad;SHIRAKAWA Masanobu |
| 分类号 |
G11C16/16 |
主分类号 |
G11C16/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system comprising:
a semiconductor memory device that includes a plurality of memory cells; and a controller that controls an operation of the semiconductor memory device to set the memory cells to have a threshold voltage distribution corresponding to data being written therein, when data is being written in the memory cells, and to set the memory cells to have a neutral threshold voltage distribution, the neutral threshold voltage distribution being different from any of a plurality of threshold voltage distributions corresponding to valid data, when data is not being written in the memory cells. |
| 地址 |
Tokyo JP |
