| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device includes a first memory cell array electrically connected to a set of first bit lines, a second memory cell array electrically connected to a set of second bit lines, and a sense amplifier module that is physically located between the first and second memory cell arrays, and shared by the first and second memory cell arrays. |
| 申请公布号 |
US2016267971(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615055284 |
申请日期 |
2016.02.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEJIMA Hiroshi |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a first memory cell array electrically connected to a set of first bit lines; a second memory cell array electrically connected to a set of second bit lines; and a sense amplifier module that is physically located between the first and second memory cell arrays, and shared by the first and second memory cell arrays. |
| 地址 |
Tokyo JP |
