METHOD OF PREPARING POLYSILICON THIN FILM AND POLYSILICON TFT STRUCTURE

摘要

Provided is a method of preparing a polysilicon thin film and a polysilicon TFT structure, the method of preparing the polysilicon thin film comprising: Step 1: providing a substrate (1) and forming a single layer of a polysilicon thin film (3) thereon, the thickness of the polysilicon thin film (3) meeting a required thickness for manufacturing a semiconductor component; and Step 2: performing silicon ion self-implantation on the polysilicon thin film (3), a silicon ion implantation dose being less than a measurement limit that would cause the polysilicon to undergo amorphization. The method of preparing the polysilicon thin film causes implanted silicon ions to form interstitial silicon and move to a polysilicon grain boundary, enabling a reduction in polysilicon grain boundary defect density and thereby improving polysilicon thin film quality. A provided polysilicon TFT structure having an island-shaped semiconductor layer formed from a low-dose silicon ion self-implanted polysilicon thin film can reduce a grain boundary barrier in an on-state, increase carrier mobility, increase on-state current, and decrease threshold voltage, thereby improving TFT characteristics.