| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to restore initial characteristics and confidence of an oxide semiconductor which are deteriorated owing to hydrogen generated after forming an oxide semiconductor layer without arranging a photodiode in a lower layer.SOLUTION: A semiconductor element comprises: a thin film transistor having an oxide semiconductor layer 4 which is formed in an island shape and contains oxygen and at least one element out of indium, gallium, zinc and tin, a source electrode 5 and a drain electrode 6 which are connected to the oxide semiconductor layer 4, at least one layer of a protection film formed in an upper layer of the oxide semiconductor layer 4, and an opening provided in the protection film at a position and with the size, which include a channel or a back channel region of the oxide semiconductor layer 4; and a photodiode 22 which is provided in an upper layer than the oxide semiconductor layer 4 of the thin film transistor and has a hydrogenated amorphous silicon layer 9.SELECTED DRAWING: Figure 21 |
