| 摘要 |
PROBLEM TO BE SOLVED: To consider internal stress of a conductive film since a semiconductor device having the conductive film is affected by the internal stress.SOLUTION: In a semiconductor device having an n-channel type TFT provided over an insulating surface, an impurity element is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to tensile stress. In a semiconductor device having a p-channel type TFT provided over an insulating surface, an impurity is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to compressive stress.SELECTED DRAWING: Figure 6 |
