| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix type display device with a pixel structure that has achieved a high aperture rate without increasing the number of masks and the number of steps by suitably arranging pixel electrodes, scan lines (gate lines), and data lines formed in a pixel portion.SOLUTION: First wiring disposed via a first insulation film between a semiconductor film 107 and a substrate is disposed by overlapping with the semiconductor film 107, and is used as a light-blocking film. A second insulation film used as a gate insulation film is formed on the semiconductor film 107, and a gate electrode 133 and second wiring 134 are formed on the second insulation film. The first and second wiring 102 and 134 intersect with each other via the first and second insulation films. A third insulation film is formed as an interlayer insulation film on the second wiring 134, and a pixel electrode 147 is formed thereon. The pixel electrode 147 can be formed so as to overlap with the first wiring 102 and the second wiring 134.SELECTED DRAWING: Figure 1 |
