MAGNETORESISTIVE SENSOR, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE

摘要

A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.

主权项

1. A magnetoresistive sensor comprising:
a substrate that has a trench structure, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; a first magnetic element, which contacts the first side of the trench structure; a second magnetic element, which contacts the second side of the trench structure; and a third magnetic element, which contacts the third side of the trench structure.