发明名称 |
METHOD FOR MANUFACTURING BONDED WAFER |
摘要 |
A method for manufacturing a bonded wafer, includes: ion-implanting a gas ion such as a hydrogen ion from a surface of a bond wafer, thereby forming an ion-implanted layer; bonding the bond wafer and a base wafer; producing a bonded wafer having a thin-film on the base wafer by delaminating the bond wafer along the ion-implanted layer; and performing an RTA treatment on the bonded wafer in a hydrogen gas-containing atmosphere; wherein a protective film is formed onto the surface of the thin-film in a heat treatment furnace in the course of temperature-falling from the maximum temperature of the RTA treatment before the bonded wafer is taken out from the heat treatment furnace; and then the bonded wafer with the protective film being formed thereon is taken out from the heat treatment furnace, and is then cleaned with a cleaning liquid which can etch the protective film and the thin-film. |
申请公布号 |
US2016365273(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201515120905 |
申请日期 |
2015.02.12 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KOBAYASHI Norihiro;AGA Hiroji |
分类号 |
H01L21/762;H01L21/02;H01L21/324;H01L21/265 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |