Implant Isolated Devices and Method for Forming the Same

摘要

A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate and extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and two end cap hardmasks are between the gate dielectric and the gate electrode over the implant isolation region. The two end cap hardmasks include same dopants as those implanted into the active region.

主权项

1. A device comprising:
a semiconductor substrate having an active region; an implant isolation region surrounding the active region and extending from a top surface of the semiconductor substrate into the semiconductor substrate; a gate structure on a portion of the active region and the implant isolation region, wherein two ends of the gate structure extend at least partially over the implant isolation region; and, wherein the gate structure comprises
a gate dielectric layer over the portion of the active region and at least partially over the implant isolation region,two end cap hardmasks, each on a portion of the gate dielectric layer over the implant isolation region, anda gate electrode disposed on at least a portion of the two end cap hardmasks and the gate dielectric layer; and,wherein one or more dopant species in the active region is present in the two end cap hardmasks.