发明名称 FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide technology for depositing a DLC film while suppressing arc discharge generation and film deposition speed-down.SOLUTION: Pulse voltage control includes first transition control for transiting a state of positive and negative pulse voltage from a first state to a second state in which an application amount of the positive voltage is larger than that in the first state. Thereby, in an initial stage of film deposition treatment in which a charge-up electric charge is not resident on a surface of a base material, the film deposition speed has priority by the first state. In the following stage in which the charge-up electric charge is resident, the film speed has priority. As the result, in the pulse voltage control of the invention, arc discharge generation is suppressed in comparison to the pulse voltage control for maintaining the first state, and film deposition speed-down is suppressed in comparison to the pulse voltage control for maintaining the second state.SELECTED DRAWING: Figure 6
申请公布号 JP2016138323(A) 申请公布日期 2016.08.04
申请号 JP20150015186 申请日期 2015.01.29
申请人 SCREEN HOLDINGS CO LTD 发明人 INOUE MITSURO;YAMAMOTO SATOSHI
分类号 C23C16/52;C23C16/27;H05H1/24;H05H1/46 主分类号 C23C16/52
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