Memory structures and related cross-point memory arrays, electronic systems, and methods of forming memory structures

摘要

A memory structure comprises first conductive lines extending in a first direction over portions of a base structure, storage element structures extending in the first direction over the first conductive lines, isolated electrode structures overlying portions of the storage element structures, select device structures extending in a second direction perpendicular to the first direction over the isolated electrode structures, second conductive lines extending in the second direction over the select device structures, additional select device structures extending in the second direction over the second conductive lines, additional isolated electrode structures overlying portions of the additional select device structures, additional storage element structures extending in the first direction over the additional isolated electrode structures, and third conductive lines extending in the first direction over the additional storage element structures. Cross-point memory arrays, electronic systems, and related methods are also described.

主权项

1. A memory structure, comprising:
first conductive lines extending in a first direction over portions of a base structure; storage element structures extending in the first direction over the first conductive lines; isolated electrode structures overlying portions of the storage element structures; select device structures extending in a second direction perpendicular to the first direction over the isolated electrode structures; second conductive lines extending in the second direction over the select device structures; additional select device structures extending in the second direction over the second conductive lines; additional isolated electrode structures overlying portions of the additional select device structures; additional storage element structures extending in the first direction over the additional isolated electrode structures; and third conductive lines extending in the first direction over the additional storage element structures.