发明名称 |
FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE USING SAME |
摘要 |
Provided is a field-effect transistor which has a high mobility and a low variation of mobility. A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a channel length direction and perpendicular to the substrate, and forming the semiconductor layer through coating process. |
申请公布号 |
EP2418684(A4) |
申请公布日期 |
2016.12.14 |
申请号 |
EP20100761720 |
申请日期 |
2010.04.07 |
申请人 |
Mitsubishi Chemical Corporation |
发明人 |
OSEKI Yosuke;SAKAI Yoshimasa;OHNO Akira |
分类号 |
H01L29/786;H01L21/336;H01L29/417;H01L29/78;H01L51/10 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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