| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive and a polishing method, capable of achieving polishing with a fine evenness while maintaining a sufficiently excellent polishing speed for a silicon oxide film.SOLUTION: An abrasive is provided which contains cerium oxide particles, a water-soluble organic polymer having a carboxylic acid group and/or salt of dicarboxylic acid, a water-soluble polyamide having a tertiary amino group and/or an oxyalkylene chain in the molecule, and water, and which has a pH of 7 or less. Moreover, additive liquid for polishing is provided which is additive liquid for preparing the abrasive by being mixed with fluid dispersion of cerium oxide particles, which contains a water-soluble organic polymer having a carboxylic acid group or salt of dicarboxylic acid, the water-soluble polyamide having a tertiary amino group and/or an oxyalkylene chain in the molecule, and water, and which has a pH of 7 or less.SELECTED DRAWING: Figure 1 |
