METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYER CONTAMINATED WITH GALLIUM

摘要

PROBLEM TO BE SOLVED: To provide a method for electron beam induced etching of layers contaminated with gallium.SOLUTION: A method for electron beam induced etching of layers includes the steps: supplying at least one kind of a first halogen compound as etching gas on a position on which an electron beam strikes a layer 90; and supplying at least one kind of a second halogen compound as precursor gas for removing gallium on the position.SELECTED DRAWING: Figure 1