MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an advantageous manufacturing method for obtaining a group III-V nitride semiconductor crystal having a high-quality and large area nonpolar face.

SOLUTION: In the manufacturing method of the group III nitride semiconductor crystal 200, a seed crystal S having an M face being a nonpolar face is prepared and a growing process for growing the group III nitride semiconductor crystal 200 in a gas phase from the M face being the nonpolar face is provided, and in the growing process, the group III nitride semiconductor crystal 200 is grown so as to extend to a +C axis direction (<0001> direction) of the seed crystal S.

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