发明名称 半導体ウェーハの特性測定装置
摘要 PROBLEM TO BE SOLVED: To provide a device for measuring characteristics of a semiconductor wafer capable of obtaining electrical characteristics with improved reproductivity, when repeatedly measuring the electrical characteristics of the semiconductor wafer by using a mercury electrode.SOLUTION: A device for measuring characteristics of a semiconductor wafer, which is contacted with the semiconductor wafer by using mercury as an electrode to measure the characteristics of the semiconductor wafer, comprises: a mercury reservoir for housing the mercury; and a conduit introducing the mercury from the mercury reservoir to a contact part with the semiconductor wafer. At least one of the mercury reservoir and the conduit is grounded.
申请公布号 JP6044521(B2) 申请公布日期 2016.12.14
申请号 JP20130238507 申请日期 2013.11.19
申请人 信越半導体株式会社 发明人 久米 史高;船木 光義
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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