发明名称 |
FABRICATION OF ACTIVE AREAS OF DIFFERENT NATURES DIRECTLY ONTO AN INSULATOR: APPLICATION TO THE SINGLE OR DOUBLE GATE MOS TRANSISTOR |
摘要 |
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material. |
申请公布号 |
EP1743375(B1) |
申请公布日期 |
2016.12.14 |
申请号 |
EP20040766083 |
申请日期 |
2004.06.25 |
申请人 |
Commissariat à l'Énergie Atomique et aux Énergies Alternatives |
发明人 |
Andrieu, François;ERNST, Thomas;DELEONIBUS, Simon |
分类号 |
H01L27/12;H01L21/203;H01L21/762;H01L21/84;H01L29/04;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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