| 摘要 |
<p>A NOR flash device and a method for manufacturing the same are provided to remove a copper diffusion effect of an aluminum pad by forming a diffusion barrier using TiSiN. A substrate(10) includes a conductive region. A first interlayer dielectric(14) is formed on the substrate. A first metal line(16) is formed on the conductive region. A second interlayer dielectric(18) is formed to cover the first metal line and the first interlayer dielectric. A first contact(20) penetrates the second interlayer dielectric. A second metal line(22) is connected through the first contact to the first metal line. One of the first contact and the first and second metal lines includes copper. At least, one of the first and second interlayer dielectrics includes a low dielectric material.</p> |
