| 摘要 |
A TFT-LCD(Thin Film Transistor-Liquid Crystal Display) and a method for manufacturing the same are provided to manufacture the TFT-LCD through a four-mask photolithographic process, thereby simplifying the manufacturing process of the TFT-LCD. A gate metal layer, a first insulating layer(23), a semiconductor layer(24), and an ohmic contact layer(25) are sequentially deposited on a substrate(21), and the deposited layers are pattern-etched to form a gate line, a gate electrode(22b), and a channel of a thin film transistor. A second insulating layer(26) is deposited and pattern-etched on the resultant substrate to expose portions of the ohmic contact layer correspondingly to source and drain regions of the thin film transistor. A source-drain metal layer is deposited and pattern-etched to form a data line crossing the gate line, and source and drain electrodes(27a,27b) contacted with the exposed portions of the ohmic contact layer. A passivation layer(28) is deposited, and then pattern-etched by using a photoresist pattern. A pixel electrode material layer is deposited on the resultant substrate. The photoresist pattern and a portion of the pixel electrode material layer on the photoresist pattern are peeled off to form a pixel electrode(31). |
