| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device with suppressed fluctuation of memory cell characteristics.SOLUTION: A plurality of first conductive layers are stacked with a predetermined pitch in a first direction perpendicular to a substrate and extends in a second direction parallel to the substrate. Memory layers are commonly provided on side surfaces of the plurality of first conductive layers and function as memory cells. Second conductive layers each have a first side surface in contact with the plurality of first conductive layers via the memory layers, and extend in the first direction. The width of the first side surface in the second direction at a first position is narrower than the width of the first side surface in the second direction at a second position. The thickness of the first conductive layer disposed at the first position in the first direction is thicker than the thickness of the first conductive layer disposed at the second position in the first direction. |
