| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which improves production efficiency.SOLUTION: A plasma CVD apparatus includes: a chamber; a funnel-shaped anode 204; a filament-shaped cathode 203; a holding part holding a substrate to be formed with film 201; an inner shield 208; a first DC power supply 207; an AC power supply 205; a second DC power supply 212; a gas feeding mechanism to feed gas within the chamber. The gas feeding mechanism feeds a first raw material gas within the chamber. The first raw material gas is turned into a plasma state by performing discharge between the cathode and the anode in the chamber. This plasma is accelerated and collided against the substrate to be formed with film to form a DLC (Diamond Like Carbon) film. The gas feeding mechanism feeds a second raw material gas and a nitriding agent to within the chamber. The second raw material gas and the nitriding agent are turned into a plasma state by performing discharge between the cathode and the anode in the chamber. This plasma is accelerated and collided against the DLC film to deposit a CN film. |
