| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method that can simultaneously enhance the selection ratio and the etching shape in etching processing for forming a hole in oxide film by using organic film as a mask.SOLUTION: In a plasma processing apparatus, a high frequency RFsuitable for plasma generation of capacitance coupling is applied to an upper electrode 46 (or lower electrode 12) by a third high frequency power source 66. In order to control the energy of ions incident from plasma into a semiconductor wafer W, two kinds of high frequencies RF(0.8 MHz), RF(13 MHz) suitable for pull-in of ions are superimposed on and applied to a susceptor 12 by first and second high frequency power sources 36, 38. Fluorocarbon-based gas is used as etchant gas in an HARC process for forming a hole in oxide film by using organic film as a mask. |
