| 摘要 |
Provided are a charge-modulation element easily enabling an electric field to be uniform over a long distance of a charge transport path and avoiding problems caused by interface defects, and a solid-state imaging device. The charge-modulation element includes a first charge-accumulation region (61), a second charge-accumulation region (62), a third charge-accumulation region (63), and a fourth charge-accumulation region (64), provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair (41a, 41b), a second field-control electrode pair (42a, 42b), a third field-control electrode pair (43a, 43b), and a fourth field-control electrode pair (44a, 44b), arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region (61), the second charge-accumulation region (62), the third charge-accumulation region (63), and the fourth charge-accumulation region (64). |
