| 摘要 |
An LED(Light Emitting Diode) chip and an LED package having the same are provided to enhance integrity of the LED package by integrating a zener diode with the LED chip, and prevent the zener diode from absorbing light emitted from the LED chip for securing high brightness. An LED(Light Emitting Diode) chip comprises a substrate(210), an n-type nitride semiconductor layer(220), an active layer(230), a p-type nitride semiconductor layer(240), a p-type electrode(250), an n-type electrode(260), a zener diode(z), and a conductive adhesive layer(270). The n-type nitride semiconductor layer is formed on the substrate. The active layer is formed on a part of the n-type nitride semiconductor layer. The p-type nitride semiconductor layer is formed on the active layer. The p-type electrode is formed on the p-type nitride semiconductor layer. The n-type electrode is formed on the n-type nitride semiconductor layer without having the active layer. The zener diode is formed on a lower side of the substrate, having an n-type semiconductor layer(300n) and p-type semiconductor layer(300p) in consecutive deposition. The conductive adhesive layer is formed on a lower surface of the substrate.
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