NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride-based semiconductor light emitting device is provided to increase an effective area for light emission by eliminating the necessity of connection electrodes for connecting a plurality of electrode pads of first and second conductivity types or a plurality of electrodes of the first and second conductivity types. A nitride semiconductor layer(120) of a first conductivity type is formed on a substrate, An active layer is formed on a predetermined region of the nitride semiconductor layer. A nitride semiconductor layer of a second conductivity type is formed on the active region. A transparent electrode(150) is formed on the nitride semiconductor layer of the second conductivity type. At least two electrode pads(170a) of the second conductivity type are formed on the transparent electrode, not coming in direct contact with the transparent electrode and separated from each other. A plurality of electrodes(170) of the second conductivity type are made of a linear type, directly extended in one direction from the electrode pad of the second conductivity. At least one electrode pad(160a) of the first conductivity type is formed on the nitride semiconductor layer of the first conductivity type where the active layer is not formed, confronting the electrode pad of the second conductivity type. A plurality of electrodes(160) of the first conductivity type is made of a linear type, directly extended in one direction from the electrode pad of the first conductivity type and composed of a finger structure gearing with the electrode of the second conductivity type.