| 摘要 |
A method for monitoring the surface of a wafer is provided to check the selectivity of a selective epitaxial growth process by comparatively analyzing measured haze level values and by detecting generation of fine surface particles and the position of the fine surface particles. Each haze level of an epitaxial layer growth region of a wafer and a region except the epitaxial layer growth region is measured. The measured haze level values are comparatively analyzed to detect generation of particles and the position of the particles. The epitaxial layer can be a silicon epitaxial layer or an amorphous carbon epitaxial layer. The haze level can be measured in a unit of ppm(parts per million).
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