发明名称 超臨界流体を用いた化合物半導体膜の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a new process which allows for production of a large area thin compound semiconductor film for use in a solar cell at low temperatures, because a process of producing a compound semiconductor film having a larger area more uniformly at a lower cost with high productivity is needed.SOLUTION: We succeeded to perform the production process of a compound semiconductor film at a low temperature through conversion of a metal film by using a supercritical fluid as a reaction solvent and a low toxicity organic compound as an additional element source. For example, in the selenization process, low toxicity diethyl selenium is used as the additional element source under a low temperature environment of 300°C for selenizing a CuIn precursor alloy film, and a CuInSecompound semiconductor film is prepared in a short time of about 1 hour.
申请公布号 JP6044942(B2) 申请公布日期 2016.12.14
申请号 JP20110139784 申请日期 2011.06.23
申请人 国立大学法人東北大学 发明人 本間 格;笘居 高明
分类号 H01L21/368;H01L21/208 主分类号 H01L21/368
代理机构 代理人
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