| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for easily determining a leak current that is caused by a crack formed on an insulating film underneath electrode pads. <P>SOLUTION: A probe is put simultaneously to a signal electrode pad 2, and an inspection electrode pad 3 which is an isolated pattern formed on a corner of a semiconductor chip, to measure a leak current between the inspection electrode pad 3 and a circle-around power interconnect 7 that runs underneath a plurality of signal electrode pads 2 and the inspection electrode 3 via insulating films 4 and 6. If a leak current larger than a rating current is measured between the inspection electrode pad 3 and the circle-around power interconnect 7, a leak current is measured between the inspection electrode pad 3 and the signal electrode pad 2 (2A) adjacent thereto. <P>COPYRIGHT: (C)2008,JPO&INPIT |
