| 摘要 |
PROBLEM TO BE SOLVED: To apply chemical treatment on a peripheral part of a substrate while suppressing consumption of the treatment liquid and treatment time.SOLUTION: When applying chemical treatment on a peripheral part of a substrate while rotating the substrate in an approximately horizontal position, a substrate treatment device heats the peripheral part of the substrate by jetting moisture vapor onto the peripheral part. Also, by jetting gas from above the substrate toward a predetermined jetting target region defined within a range surrounded with a rotation track of the periphery part of the substrate on a top surface of the substrate, a gas flow flowing from the jetting target region toward the peripheral part of the substrate is generated on the substrate. The temperature decrease at the periphery part of the substrate is suppressed due to heat obtained from the moisture vapor for heating, thereby, decrease in chemical activity of treatment liquid is suppressed and treatment on the substrate is rapidly expedited. Also, by generating on the substrate the gas flow flowing toward the periphery part on the top surface of the substrate, mist of concentrated moisture vapor, the treatment liquid, and such are unlikely to be adhered to the center side of the substrate. |
