| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation method, etc. for evaluating reliability of interconnection by executing numerical simulation of an EM damage process and evaluating threshold current density while considering a reservoir effect for multilayer interconnection of via connection having reservoir structure.SOLUTION: Current density distribution and temperature distribution are calculated by two-dimensional FE analysis. Dominant parameters (AFD, AFD) in the respective elements are calculated from analysis results and thin film characteristics. Atomic concentration N* regarding &thetas; is calculated based on values of the dominant parameters. Atomic concentration N in the respective elements is calculated by an average of N* for all the values of &thetas;. After repeatedly performing settings for calculation until reaching a stationary state, the calculation of the dominant parameters is repeated. In multilayer interconnection structure of via connection having reservoir structure, allowable current density of multilayer interconnection can be increased by providing only a via side of a cathode end with a reservoir, and increasing the minimum atomic concentration inside the multilayer interconnection. |
