| 摘要 |
Provided is a method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming a first metal film of noble series for the bottom electrode; forming a ferroelectric film on the first metal film; conducting a first thermal process on the resultant structure where the ferroelectric film is formed; conducting an ion implantation process on the resultant structure passing through the first thermal process; conducting a second thermal process on the resultant structure passing through the ion implantation process; forming a second metal layer of noble series for the top electrode on the ferroelectric film in the resultant structure passing through the first thermal process; and conducting a third thermal process on the resultant structure.
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