发明名称 AN APPARATUS FOR FIELD EFFECT TRANSISTOR BASED DEVICES AND ASSOCIATED METHODS
摘要 An apparatus comprising: a drain electrode (102), a source electrode (104), and a channel layer (106), the drain electrode and source electrode in respective electrical contact with the channel layer to allow a flow of charge carriers between the source electrode and the drain electrode using the channel layer, the channel layer having opposing substrate and functionalisation sides; a channel gate (112) configured to modulate the conductivity of the channel layer via application of a voltage thereto; and at least one contact gate (114, 116) configured to lower a contact resistance between the channel layer and at least one of the source electrode and the drain electrode via application of a voltage thereto; wherein the channel gate and the at least one contact gate are provided on the substrate side, opposing the functionalisation side, of the channel layer.
申请公布号 EP3104416(A1) 申请公布日期 2016.12.14
申请号 EP20150171088 申请日期 2015.06.09
申请人 Nokia Technologies Oy 发明人 Allen, Mark;White, Richard
分类号 H01L29/778;G01N27/414;H01L29/16;H01L29/417;H01L29/423 主分类号 H01L29/778
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