| 摘要 |
A method for growing a silicon single crystal using a single crystal growing device which is provided with a water-cooled body that encloses a growing single crystal and which is provided with a thermal shield that surrounds an outer peripheral face and lower end face of the water-cooled body, the method comprising, when growing a single crystal with a radius of Rmax(mm), pulling the single crystal under a condition which satisfies formula (A) in a range of 0<R<Rmax-35(mm) given that a temperature gradient of the direction of an actual pulling axis at a position radius R (mm) from the center of the single crystal is Greal(R) and an optimum temperature gradient is Gideal(R) in the vicinity of a solid-liquid interface of the single crystal. |Greal(R)−Gideal(R)|/Greal(R)<0.08 …(A) In the formula (A), Gideal(R)=[(0.1789+0.0012×σmean(0))/(0.1789+0.0012×σmean(x))]×Greal(0), and in this formula, x=R/Rmax, and σmean(x) is average stress at a position radius R from the center of the single crystal. According to this growing method, a large diameter crystal with no defects can be accurately grown. |
