SEMICONDUCTOR LIGHT EMITTING DEVICE, AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To enhance external quantum efficiency by forming protrusions and recesses uniformly with low resistance on the light take-out surface of a semiconductor light emitting device.

SOLUTION: The semiconductor light emitting device comprises an active layer 3 of nitride semiconductor having a first major surface and a second major surface opposing the first major surface, an n-type semiconductor layer 4 provided with a protrusion 4a having irregular upper portion on the first major surface of the active layer 3 and taking out the light emitted from the active layer 3, and a p-type semiconductor layer 2 formed on the second major surface of the active layer 3.

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